Discrete Semiconductor Products

STD6N80K5

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STMicroelectronics

POWER MOSFET, N CHANNEL, 800 V, 4.5 A, 0.0013 OHM, TO-252 (DPAK), SURFACE MOUNT

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DocumentsProduct Change Notice EN Datasheet +16

Discrete Semiconductor Products

STD6N80K5

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 800 V, 4.5 A, 0.0013 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD6N80K5

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	255 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	85 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	30 V
Vgs(th) (Max) @ Id	5 V

STD6N80K5 Series

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a DPAK package

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Supplier Device Package	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]
STMicroelectronics STD6N80K5	255 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	10 V	1.6 Ohm	7.5 nC	5 V	150 °C	-55 °C	85 W	DPAK	N-Channel	MOSFET (Metal Oxide)	4.5 A	800 V	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5268	$ 2.48
Newark	Each	1	$ 2.64
		10	$ 2.02
		100	$ 1.59
		500	$ 1.36
		1000	$ 1.28
		2500	$ 1.20
		5000	$ 1.19

Description

General part information

STD6N80K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.