Discrete Semiconductor Products

GCMS080B120S1-E1

Active

SIC 1200V 80M MOSFET & 10A SBD S

Discrete Semiconductor Products

Active

SIC 1200V 80M MOSFET & 10A SBD S

Technical Specifications

Parameters and characteristics for this part

Specification	GCMS080B120S1-E1

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	58 nC
Input Capacitance (Ciss) (Max)	1374 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power Dissipation (Max)	142 W
Rds On (Max)	100 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

Part	Power Dissipation (Max)	Package Name	Vgs (Max) Negative	Vgs (Max) Positive	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Technology	Gate Charge (Max)	Vgs(th) (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max)
SemiQ GCMS080B120S1-E1	142 W	SOT-227	-10 V	25 V	Chassis Mount	20 V	-55 °C	175 °C	30 A	miniBLOC SOT-227-4	SiCFET (Silicon Carbide)	58 nC	4 V	100 mOhm	1200 V	N-Channel	1374 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 1200 V 30A (Tc) 142W (Tc) Chassis Mount SOT-227

Technical documentation and resources