Discrete Semiconductor Products

UPA2451CTL-E1-A

Obsolete

30V 8.2A 2.5W 32MΩ@2.5V,4A 1V 2 N-CHANNEL HWSON-6 MOSFETS ROHS

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Discrete Semiconductor Products

Obsolete

30V 8.2A 2.5W 32MΩ@2.5V,4A 1V 2 N-CHANNEL HWSON-6 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2451CTL-E1-A

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8.2 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6.3 nC
Input Capacitance (Ciss) (Max) @ Vds	605 pF
Mounting Type	Surface Mount
Package / Case	6-VFDFN Exposed Pad
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	6-HWSON
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Power - Max [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation UPA2451BTL-E1-A	1.5 V	Surface Mount	MOSFET (Metal Oxide)	30 V	540 pF	20 mOhm	6-HWSON	6-VFDFN Exposed Pad	9.2 nC	Logic Level Gate	700 mW	2 N-Channel (Dual)	8.2 A
Renesas Electronics Corporation UPA2451CTL-E1-A	1.5 V	Surface Mount	MOSFET (Metal Oxide)	30 V	605 pF	20 mOhm	6-HWSON	6-VFDFN Exposed Pad	6.3 nC	Logic Level Gate	700 mW	2 N-Channel (Dual)	8.2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	492	$ 0.61
LCSC	N/A	1	$ 0.00

General part information

The UPA2451BTL is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources