UPA2451 Series

N-Channel Mos Field Effect Transistor For Switching

Catalog

N-Channel Mos Field Effect Transistor For Switching

Part	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Feature	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation UPA2451BTL-E1-A	2 N-Channel (Dual)	8.2 A	1.5 V	MOSFET (Metal Oxide)	30 V	6-HWSON	Logic Level Gate	700 mW	540 pF	6-VFDFN Exposed Pad	Surface Mount	9.2 nC	20 mOhm
Renesas Electronics Corporation UPA2451CTL-E1-A	2 N-Channel (Dual)	8.2 A	1.5 V	MOSFET (Metal Oxide)	30 V	6-HWSON	Logic Level Gate	700 mW	605 pF	6-VFDFN Exposed Pad	Surface Mount	6.3 nC	20 mOhm

N-Channel Mos Field Effect Transistor For Switching

The UPA2451CTL is a N-Channel Mos Field Effect Transistor For Switching.