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2N4912
Discrete Semiconductor Products

2N3583

Active
Microchip Technology

TRANSISTOR GP BJT NPN 175V 1A 35000MW 3-PIN(2+TAB) TO-66 TRAY

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2N4912
Discrete Semiconductor Products

2N3583

Active
Microchip Technology

TRANSISTOR GP BJT NPN 175V 1A 35000MW 3-PIN(2+TAB) TO-66 TRAY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3583
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]35 W
Supplier Device PackageTO-66 (TO-213AA)
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)175 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 26.22
Microchip DirectN/A 1$ 28.24
NewarkEach 100$ 26.22
500$ 25.21

Description

General part information

2N3583-Transistor Series

Transistor GP BJT NPN 175V 1A 35000mW 3-Pin(2+Tab) TO-66 Tray

Documents

Technical documentation and resources