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TO-247-3-PKG-Series
Discrete Semiconductor Products

APT34M60B

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Microchip Technology

MOSFET N-CH 600V 36A TO247

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TO-247-3-PKG-Series
Discrete Semiconductor Products

APT34M60B

Active
Microchip Technology

MOSFET N-CH 600V 36A TO247

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT34M60B
Current - Continuous Drain (Id) @ 25°C36 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs165 nC
Input Capacitance (Ciss) (Max) @ Vds6640 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]624 W
Rds On (Max) @ Id, Vgs [Max]190 mOhm
Supplier Device PackageTO-247 [B]
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 12.60

Description

General part information

APT34M60 Series

N-Channel 600 V 36A (Tc) 624W (Tc) Through Hole TO-247 [B]

Documents

Technical documentation and resources