Specification	ATP401-TL-H

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	17000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs [Max]	3.7 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

ATP401 Series

N-Channel Power MOSFET, 60V, 100A, 3.7mΩ

Part	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package
ON Semiconductor ATP401-TL-H	150 °C	3.7 mOhm	17000 pF	MOSFET (Metal Oxide)	ATPAK (2 leads+tab)	90 W	300 nC	100 A	4.5 V 10 V	20 V	Surface Mount	60 V	N-Channel	ATPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

ATP401 is an N-Channel Power MOSFET, 60V, 100A, 3.7mΩ, ATPAK for General-Purpose Switching Device Application.