N-Channel Power MOSFET, 60V, 100A, 3.7mΩ
N-Channel Power MOSFET, 60V, 100A, 3.7mΩ
| Part | Operating Temperature | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 150 °C | 3.7 mOhm | 17000 pF | MOSFET (Metal Oxide) | ATPAK (2 leads+tab) | 90 W | 300 nC | 100 A | 4.5 V 10 V | 20 V | Surface Mount | 60 V | N-Channel | ATPAK |