Discrete Semiconductor Products

STB60NE06L-16T4

Obsolete

MOSFET N-CH 60V 60A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 60A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB60NE06L-16T4

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	150 W
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology
STMicroelectronics STB60NE06L-16T4	60 V	15 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 A	175 °C	-55 °C	70 nC	N-Channel	150 W	D2PAK	2.5 V	Surface Mount	5 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.31

General part information

N-Channel 60 V 60A (Tc) 150W (Tc) Surface Mount D2PAK

Technical documentation and resources