Discrete Semiconductor Products
SCT3022ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 93 A, 650 V, 0.022 OHM, TO-247N
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Discrete Semiconductor Products
SCT3022ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 93 A, 650 V, 0.022 OHM, TO-247N
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3022ALGC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 93 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 133 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2208 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 339 W |
| Rds On (Max) @ Id, Vgs | 28.6 mOhm |
| Supplier Device Package | TO-247N |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT3022AL Series
SCT3022AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources