NTH4L028N170M1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 81 A, 1.7 KV, 0.028 OHM, TO-247
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NTH4L028N170M1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 81 A, 1.7 KV, 0.028 OHM, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | NTH4L028N170M1 |
|---|---|
| Drain to Source Voltage (Vdss) | 1700 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 200 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4230 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) [Max] | 535 W |
| Rds On (Max) @ Id, Vgs | 40 mOhm |
| Supplier Device Package | TO-247-4L |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -15 V |
| Vgs(th) (Max) @ Id | 4.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 37.01 | |
| 10 | $ 27.49 | |||
| ON Semiconductor | N/A | 1 | $ 26.21 | |
Description
General part information
NTH4L028N170M1 Series
Silicon Carbide (SiC) MOSFET new family, 1700V M1 planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This EliteSiC family delivers optimum performance when driven with 20V gate drive but also works well with 18V gate drive.
Documents
Technical documentation and resources