Specification	CSD16411Q3

Current - Continuous Drain (Id) @ 25°C	14 A, 56 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.8 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id	2.3 V

CSD16411Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 15 mOhm

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Texas Instruments CSD16411Q3	25 V	14 A 56 A	-12 V 16 V	3.8 nC	2.7 W	8-VSON-CLIP (3.3x3.3)	10 mOhm	4.5 V 10 V	N-Channel	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	570 pF	-55 °C	150 °C	2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 25-V, 8-mΟ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources