CSD16411Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 15 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 15 mOhm

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Texas Instruments CSD16411Q3	25 V	14 A 56 A	-12 V 16 V	3.8 nC	2.7 W	8-VSON-CLIP (3.3x3.3)	10 mOhm	4.5 V 10 V	N-Channel	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	570 pF	-55 °C	150 °C	2.3 V

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 15 mOhm

Key Features

• Ultra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing SystemsOptimized for Control FET ApplicationsAll other trademarks are the property of their respective ownersUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing SystemsOptimized for Control FET ApplicationsAll other trademarks are the property of their respective owners

Description

This 25-V, 8-mΟ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 25-V, 8-mΟ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.