Specification	IMD10AMT1G

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	68, 100
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Power - Max [Max]	285 mW
Resistor - Base (R1)	130 Ohms, 13 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SC-74R
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

IMD10A Series

Dual Die part consisting of a 100mA NBRT and 500mA PBRT

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Package / Case	Resistor - Emitter Base (R2)
ON Semiconductor IMD10AMT1G	68 100	500 mA	SC-74R	13 kOhms 130 Ohms	500 nA	285 mW	300 mV	1 NPN 1 PNP	50 V	Surface Mount	SC-74 SOT-457	10 kOhms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network.

Technical documentation and resources