STF18N65DM2
ActiveN-CHANNEL 650 V, 231 MOHM TYP., 12 A, MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE
STF18N65DM2
ActiveN-CHANNEL 650 V, 231 MOHM TYP., 12 A, MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STF18N65DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 965 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 28 W |
| Rds On (Max) @ Id, Vgs | 295 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
STF18N65DM2 Series
N-channel 650 V, 231 mOhm typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP package
| Part | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | N-Channel | 25 V | 22 nC | 965 pF | 295 mOhm | 12 A | TO-220-3 Full Pack | 150 °C | -55 °C | 650 V | 28 W | 5 V | MOSFET (Metal Oxide) | 10 V | TO-220FP | Through Hole |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.16 | |
Description
General part information
STF18N65DM2 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources