Discrete Semiconductor Products
STS5N15F4
ActiveSTMicroelectronics
N-CHANNEL 150 V, 0.057 OHM, 5 A, SO-8 STRIPFET(TM) DEEPGATE(TM) POWER MOSFET
Discrete Semiconductor Products
STS5N15F4
ActiveSTMicroelectronics
N-CHANNEL 150 V, 0.057 OHM, 5 A, SO-8 STRIPFET(TM) DEEPGATE(TM) POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STS5N15F4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 48 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2710 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 63 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STS5N15F4 Series
This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.
Documents
Technical documentation and resources