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TO-247-4
Discrete Semiconductor Products

MSC040SMA120B4

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Microchip Technology

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 66 A, 1.2 KV, 0.04 OHM, TO-247

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TO-247-4
Discrete Semiconductor Products

MSC040SMA120B4

Active
Microchip Technology

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 66 A, 1.2 KV, 0.04 OHM, TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationMSC040SMA120B4
Current - Continuous Drain (Id) @ 25°C66 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]137 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1990 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power Dissipation (Max)323 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageTO-247-4
Vgs (Max) [Max]23 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id [Max]2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 24.95
25$ 23.01
100$ 20.02
Microchip DirectTUBE 1$ 17.47
10$ 16.11
100$ 14.02
500$ 13.08
NewarkEach 1$ 18.95
5$ 18.72
10$ 18.50
25$ 18.29
50$ 18.09
100$ 17.88
250$ 17.68

Description

General part information

MSC040SMA120 Series

MSC040SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.