Discrete Semiconductor Products

IRFB11N50APBF

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MOSFET N-CH 500V 11A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 500V 11A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB11N50APBF

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	1423 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	520 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division IRFB11N50APBF	30 V	Through Hole	TO-220AB	1423 pF	TO-220-3	4 V	-55 °C	150 °C	170 W	11 A	MOSFET (Metal Oxide)	N-Channel	520 mOhm	52 nC	10 V	500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 11A (Tc) 170W (Tc) Through Hole TO-220AB

Technical documentation and resources