IRFB11 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 11A TO220AB
| Part | Vgs (Max) | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 V | Through Hole | TO-220AB | 1423 pF | TO-220-3 | 4 V | -55 °C | 150 °C | 170 W | 11 A | MOSFET (Metal Oxide) | N-Channel | 520 mOhm | 52 nC | 10 V | 500 V |