Specification	5LN01C-TB-E

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.57 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6.6 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	250 mW
Rds On (Max) @ Id, Vgs	7.8 Ohm
Supplier Device Package	SC-59-3/CP3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

5LN01C Series

N-Channel Small Signal MOSFET, 50V, 0.1A, 7.8Ω, Single CP

Part	FET Type	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor 5LN01C-TB-EX
ON Semiconductor 5LN01SP	N-Channel	SC-72	1.3 V	7.8 Ohm	150 °C	100 mA	4 V	1.5 V	Through Hole	10 V	250 mW	3-SPA	MOSFET (Metal Oxide)	50 V	6.6 pF	1.57 nC
ON Semiconductor 5LN01C-TB-E	N-Channel	SC-59 SOT-23-3 TO-236-3		7.8 Ohm	150 °C	100 mA	4 V	1.5 V	Surface Mount	10 V	250 mW	SC-59-3/CP3	MOSFET (Metal Oxide)	50 V	6.6 pF	1.57 nC
ON Semiconductor 5LN01M-TL-E	N-Channel	SC-70 SOT-323		7.8 Ohm	150 °C	100 mA	4 V	1.5 V	Surface Mount	10 V	150 mW	MCP	MOSFET (Metal Oxide)	50 V	6.6 pF	1.57 nC
ON Semiconductor 5LN01SS-TL-H	N-Channel	SC-81		7.8 Ohm	150 °C	100 mA	4 V	1.5 V	Surface Mount	10 V	150 mW	3-SSFP	MOSFET (Metal Oxide)	50 V	6.6 pF	1.57 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

5LN01C is N-Channel Small Signal MOSFET, 50V, 0.1A, 7.8Ω, Single CP for General-Purpose Switching Device Applications.