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3-SPA
Discrete Semiconductor Products

5LN01SP

Obsolete
ON Semiconductor

MOSFET N-CH 50V 100MA 3SPA

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3-SPA
Discrete Semiconductor Products

5LN01SP

Obsolete
ON Semiconductor

MOSFET N-CH 50V 100MA 3SPA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification5LN01SP
Current - Continuous Drain (Id) @ 25°C100 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.57 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6.6 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseSC-72
Power Dissipation (Max) [Max]250 mW
Rds On (Max) @ Id, Vgs7.8 Ohm
Supplier Device Package3-SPA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

5LN01C Series

5LN01C is N-Channel Small Signal MOSFET, 50V, 0.1A, 7.8Ω, Single CP for General-Purpose Switching Device Applications.

Documents

Technical documentation and resources

No documents available