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Technical Specifications
Parameters and characteristics for this part
| Specification | 5LN01SP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.57 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 6.6 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | SC-72 |
| Power Dissipation (Max) [Max] | 250 mW |
| Rds On (Max) @ Id, Vgs | 7.8 Ohm |
| Supplier Device Package | 3-SPA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
5LN01C Series
5LN01C is N-Channel Small Signal MOSFET, 50V, 0.1A, 7.8Ω, Single CP for General-Purpose Switching Device Applications.
Documents
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