Discrete Semiconductor Products

SSM6L14FE(TE85L,F)

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.8 A/-0.72 A, 0.24 Ω@4.5V/0.3 Ω@4.5V, SOT-563(ES6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.8 A/-0.72 A, 0.24 Ω@4.5V/0.3 Ω@4.5V, SOT-563(ES6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L14FE(TE85L,F)

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	720 mA, 800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2 nC
Gate Charge (Qg) (Max) @ Vgs [Min]	1.76 nC
Input Capacitance (Ciss) (Max) @ Vds	110 pF, 90 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	150 mW
Rds On (Max) @ Id, Vgs	300 mOhm, 240 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.72 A, 0.24 Ω@4.5V/0.3 Ω@4.5V, SOT-563(ES6)

Part	Vgs(th) (Max) @ Id	Technology	Package / Case	Operating Temperature	Power - Max [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Feature	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Configuration
Toshiba Semiconductor and Storage SSM6L14FE(TE85L,F)	1 V	MOSFET (Metal Oxide)	SOT-563 SOT-666	150 °C	150 mW	ES6	2 nC	1.76 nC	720 mA 800 mA	240 mOhm 300 mOhm	20 V	Logic Level Gate	1.5 V	90 pF 110 pF	Surface Mount	N and P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.72 A, 0.24 Ω@4.5V/0.3 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources