High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.72 A, 0.24 Ω@4.5V/0.3 Ω@4.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.72 A, 0.24 Ω@4.5V/0.3 Ω@4.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.72 A, 0.24 Ω@4.5V/0.3 Ω@4.5V, SOT-563(ES6)
| Part | Vgs(th) (Max) @ Id | Technology | Package / Case | Operating Temperature | Power - Max [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Min] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Feature | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1 V | MOSFET (Metal Oxide) | SOT-563 SOT-666 | 150 °C | 150 mW | ES6 | 2 nC | 1.76 nC | 720 mA 800 mA | 240 mOhm 300 mOhm | 20 V | Logic Level Gate | 1.5 V | 90 pF 110 pF | Surface Mount | N and P-Channel |