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2N3792
Discrete Semiconductor Products

2N3715

Active
Microchip Technology

POWER BJT TO-3 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

2N3792
Discrete Semiconductor Products

2N3715

Active
Microchip Technology

POWER BJT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3715
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]50
Mounting TypeThrough Hole
Package / CaseTO-3, TO-204AA
Power - Max [Max]5 W
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic [Max]2.5 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 53.83
Microchip DirectN/A 1$ 57.96
NewarkEach 100$ 53.82
500$ 51.75

Description

General part information

2N3715-Transistor Series

This specification covers the performance requirements for NPN, silicon, high-power 2N3715 and 2N3716 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/408. The device package outline is a TO–204AA (formerly TO–3).

Documents

Technical documentation and resources