Zenode.ai Logo
Beta
NTMFWS1D5N08XT1G
Discrete Semiconductor Products

NVMFWS0D9N04XMT1G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40 V, 273 A, 0.90 MΩ

Deep-Dive with AI

Search across all available documentation for this part.

NTMFWS1D5N08XT1G
Discrete Semiconductor Products

NVMFWS0D9N04XMT1G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40 V, 273 A, 0.90 MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFWS0D9N04XMT1G
Current - Continuous Drain (Id) @ 25°C48 A, 273 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]3896 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)121 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs0.9 mOhm
Supplier Device Package4.9x5.9, 8-SOFL-WF, 5-DFNW
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.92
10$ 2.58
100$ 1.81
500$ 1.49
Digi-Reel® 1$ 3.92
10$ 2.58
100$ 1.81
500$ 1.49
Tape & Reel (TR) 1500$ 1.36
ON SemiconductorN/A 1$ 0.95

Description

General part information

NVMFWS0D9N04XM Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.