
Discrete Semiconductor Products
NVMFWS0D9N04XMT1G
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 40 V, 273 A, 0.90 MΩ
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Discrete Semiconductor Products
NVMFWS0D9N04XMT1G
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 40 V, 273 A, 0.90 MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFWS0D9N04XMT1G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 48 A, 273 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61.3 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3896 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Power Dissipation (Max) | 121 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 0.9 mOhm |
| Supplier Device Package | 4.9x5.9, 8-SOFL-WF, 5-DFNW |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.92 | |
| 10 | $ 2.58 | |||
| 100 | $ 1.81 | |||
| 500 | $ 1.49 | |||
| Digi-Reel® | 1 | $ 3.92 | ||
| 10 | $ 2.58 | |||
| 100 | $ 1.81 | |||
| 500 | $ 1.49 | |||
| Tape & Reel (TR) | 1500 | $ 1.36 | ||
| ON Semiconductor | N/A | 1 | $ 0.95 | |
Description
General part information
NVMFWS0D9N04XM Series
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources