NVMFWS0D9N04XM Series

Single N-Channel Power MOSFET 40 V, 273 A, 0.90 mΩ

Catalog

Single N-Channel Power MOSFET 40 V, 273 A, 0.90 mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)
ON Semiconductor NVMFWS0D9N04XMT1G	3896 pF	40 V	10 V	MOSFET (Metal Oxide)	3.5 V	4.9x5.9 5-DFNW 8-SOFL-WF	AEC-Q101	Automotive	61.3 nC	N-Channel	-55 °C	175 ░C	121 W	Surface Mount Wettable Flank	0.9 mOhm	48 A 273 A	8-PowerTDFN 5 Leads	20 V

Catalog

Single N-Channel Power MOSFET 40 V, 273 A, 0.90 mΩ

Key Features

• Small Footprint (5x6 mm)

• Low RDS(on)

• Low QGand Capacitance

• Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.