Discrete Semiconductor Products

SQM200N04-1M8_GE3

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MOSFET N-CH 40V 200A TO263-7

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Discrete Semiconductor Products

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MOSFET N-CH 40V 200A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	SQM200N04-1M8_GE3

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	310 nC
Input Capacitance (Ciss) (Max) @ Vds	17350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	TO-263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SQM200N04-1M1L_GE3	200 A	4.5 V 10 V	40 V	413 nC	MOSFET (Metal Oxide)	2.5 V	1.1 mOhm	-55 °C	175 ░C	375 W	D2PAK TO-263-7	Surface Mount	20655 pF	20 V	TO-263-7	N-Channel
Vishay General Semiconductor - Diodes Division SQM200N04-1M8_GE3	200 A	10 V	40 V		MOSFET (Metal Oxide)	3.5 V	1.8 mOhm	-55 °C	175 ░C	375 W	D2PAK TO-263-7	Surface Mount	17350 pF	20 V	TO-263-7	N-Channel	310 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 200A (Tc) 375W (Tc) Surface Mount TO-263-7

Technical documentation and resources