SQM200 Series

Catalog

MOSFET N-CH 40V 200A TO263-7

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SQM200N04-1M1L_GE3	200 A	4.5 V 10 V	40 V	413 nC	MOSFET (Metal Oxide)	2.5 V	1.1 mOhm	-55 °C	175 ░C	375 W	D2PAK TO-263-7	Surface Mount	20655 pF	20 V	TO-263-7	N-Channel
Vishay General Semiconductor - Diodes Division SQM200N04-1M8_GE3	200 A	10 V	40 V		MOSFET (Metal Oxide)	3.5 V	1.8 mOhm	-55 °C	175 ░C	375 W	D2PAK TO-263-7	Surface Mount	17350 pF	20 V	TO-263-7	N-Channel	310 nC