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Discrete Semiconductor Products

IXTL2N450

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Littelfuse/Commercial Vehicle Products

DISCMOSFET NCH STD-VERYHIVOLT ISOPLUS264/ TUBE

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ISOPLUS i5 (back)
Discrete Semiconductor Products

IXTL2N450

Active
Littelfuse/Commercial Vehicle Products

DISCMOSFET NCH STD-VERYHIVOLT ISOPLUS264/ TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTL2N450
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)4500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]156 nC
Input Capacitance (Ciss) (Max) @ Vds6900 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseISOPLUSi5-Pak™
Power Dissipation (Max) [Max]220 W
Rds On (Max) @ Id, Vgs23 Ohm
Supplier Device PackageISOPLUSi5-Pak™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 123.52
25$ 110.17
NewarkEach 100$ 108.25

Description

General part information

IXTL2x180N10T Series

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources