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Discrete Semiconductor Products

IXTL2X180N10T

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 ISOPLUS264/ TUBE

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DocumentsUR_QQQX2_E72873_20171208

Discrete Semiconductor Products

IXTL2X180N10T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 ISOPLUS264/ TUBE

Deep-Dive with AI

DocumentsUR_QQQX2_E72873_20171208

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTL2X180N10T

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	151 nC
Input Capacitance (Ciss) (Max) @ Vds	6900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUSi5-Pak™
Power - Max [Max]	150 W
Rds On (Max) @ Id, Vgs	7.4 mOhm
Supplier Device Package	ISOPLUSi5-Pak™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.5 V

IXTL2x180N10T Series

DiscMosfet NCh Std-VeryHiVolt ISOPLUS264

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Configuration	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Littelfuse/Commercial Vehicle Products IXTL2X180N10T	-55 °C	175 ░C	150 W	100 A	ISOPLUSi5-Pak™	7.4 mOhm	MOSFET (Metal Oxide)	151 nC	2 N-Channel (Dual)	ISOPLUSi5-Pak™	6900 pF	Through Hole	100 V	4.5 V
Littelfuse/Commercial Vehicle Products IXTL2N450	-55 °C	150 °C		2 A	ISOPLUSi5-Pak™	23 Ohm	MOSFET (Metal Oxide)			ISOPLUSi5-Pak™	6900 pF	Through Hole	4500 V		156 nC	20 V	N-Channel	220 W	10 V
Littelfuse/Commercial Vehicle Products IXTL2N470	-55 °C	150 °C		2 A	ISOPLUSi5-Pak™	20 Ohm	MOSFET (Metal Oxide)	180 nC		ISOPLUSi5-Pak™	6860 pF	Through Hole	4700 V			20 V	N-Channel	220 W	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 15.26
Newark	Each (Supplied on Full Reel)	1	$ 13.65
		400	$ 12.97
		800	$ 12.58
		1600	$ 12.19
		2400	$ 11.61

Description

General part information

IXTL2x180N10T Series

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources

UR_QQQX2_E72873_20171208

Document