Discrete Semiconductor Products

SIHB125N60EF-GE3

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MOSFET N-CH 600V 25A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 600V 25A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB125N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1533 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	179 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIHB125N60EF-GE3	MOSFET (Metal Oxide)	600 V	125 mOhm	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	179 W	25 A	5 V	30 V	10 V	Surface Mount	N-Channel	1533 pF	-55 °C	150 °C

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General part information

N-Channel 600 V 25A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources