SIHB125 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 25A D2PAK
| Part | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 600 V | 125 mOhm | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 179 W | 25 A | 5 V | 30 V | 10 V | Surface Mount | N-Channel | 1533 pF | -55 °C | 150 °C |