Discrete Semiconductor Products

FERD30H60CG-TR

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60 V, 30 A DUAL FIELD-EFFECT RECTIFIER DIODE (FERD)

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Discrete Semiconductor Products

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60 V, 30 A DUAL FIELD-EFFECT RECTIFIER DIODE (FERD)

Technical Specifications

Parameters and characteristics for this part

Specification	FERD30H60CG-TR

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	170 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Speed	500 mA
Supplier Device Package	D2PAK
Technology	FERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If [Max]	585 mV

60 V, 30 A dual Field-Effect Rectifier Diode (FERD)

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Speed	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Technology	Operating Temperature - Junction [Max]	Current - Average Rectified (Io) (per Diode)
STMicroelectronics FERD30H60CG-TR	Surface Mount	585 mV	60 V	1 Pair Common Cathode	500 mA	170 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	FERD (Field Effect Rectifier Diode)	175 ░C	15 A
STMicroelectronics FERD30H60CTS	Through Hole	585 mV	60 V	1 Pair Common Cathode	500 mA	170 µA	TO-220-3	TO-220	FERD (Field Effect Rectifier Diode)	175 ░C	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.

This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.