Specification	FDI038AN06A0

Current - Continuous Drain (Id) @ 25°C	17 A, 80 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	124 nC
Input Capacitance (Ciss) (Max) @ Vds	6400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDI038AN06A0 Series

N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor FDI038AN06A0	TO-262 (I2PAK)	310 W	MOSFET (Metal Oxide)	4 V	6 V 10 V	6400 pF	124 nC	-55 °C	175 ░C	Through Hole	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	60 V	17 A 80 A	20 V	3.8 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	102	$ 2.95

General part information

N-Channel PowerTrench®MOSFET 60V, 80A, 3.8mΩ

Technical documentation and resources