FDI038AN06A0 Series

N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor FDI038AN06A0	TO-262 (I2PAK)	310 W	MOSFET (Metal Oxide)	4 V	6 V 10 V	6400 pF	124 nC	-55 °C	175 ░C	Through Hole	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	60 V	17 A 80 A	20 V	3.8 mOhm

N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ

• RDS(on)= 3.5mΩ (Typ.) @ VGS= 10V, ID= 80A

• QG(tot)= 96nC (Typ.) @ VGS= 10V

• Low Miller Charge

• Low QrrBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

N-Channel PowerTrench®MOSFET 60V, 80A, 3.8mΩ