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Technical Specifications
Parameters and characteristics for this part
| Specification | NTZD3152PT1H |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 430 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 250 mW |
| Rds On (Max) @ Id, Vgs | 900 mOhm |
| Supplier Device Package | SOT-563 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTZD3152P Series
This is a 20 V Dual P-Channel Power MOSFET with ESD Protection.
Documents
Technical documentation and resources