Specification	NTZD3152PT1G

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	430 mA
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	175 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	250 mW
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

NTZD3152P Series

Dual P-Channel Small Signal MOSFET with ESD Protection -20V, -430mA, 900mΩ

Part	Package / Case	Supplier Device Package	Configuration	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTZD3152PT1G	SOT-563 SOT-666	SOT-563	2 P-Channel	20 V	1 V	MOSFET (Metal Oxide)	Surface Mount	430 mA	-55 °C	150 °C	900 mOhm	250 mW	175 pF
ON Semiconductor NTZD3152PT1H	SOT-563 SOT-666	SOT-563	2 P-Channel	20 V	1 V	MOSFET (Metal Oxide)	Surface Mount	430 mA	-55 °C	150 °C	900 mOhm	250 mW	175 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This is a 20 V Dual P-Channel Power MOSFET with ESD Protection.

Technical documentation and resources