Zenode.ai Logo
Beta
SG6858TZ
Discrete Semiconductor Products

FDC3601N

Active
ON Semiconductor

DUAL N-CHANNEL 100V SPECIFIED POWERTRENCH<SUP>®</SUP> MOSFET 1.0A, 500MΩ

Deep-Dive with AI

Search across all available documentation for this part.

SG6858TZ
Discrete Semiconductor Products

FDC3601N

Active
ON Semiconductor

DUAL N-CHANNEL 100V SPECIFIED POWERTRENCH<SUP>®</SUP> MOSFET 1.0A, 500MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC3601N
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C1 A
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs5 nC
Input Capacitance (Ciss) (Max) @ Vds153 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs [Max]500 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.94
10$ 0.59
100$ 0.38
500$ 0.29
1000$ 0.26
Digi-Reel® 1$ 0.94
10$ 0.59
100$ 0.38
500$ 0.29
1000$ 0.26
Tape & Reel (TR) 3000$ 0.23
6000$ 0.21
9000$ 0.20
15000$ 0.19
21000$ 0.18
30000$ 0.18
NewarkEach (Supplied on Full Reel) 3000$ 0.25
6000$ 0.23
12000$ 0.21
18000$ 0.20
30000$ 0.19
ON SemiconductorN/A 1$ 0.19

Description

General part information

FDC3601N Series

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Documents

Technical documentation and resources