FDC3601N Series

Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ

Catalog

Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ

Part	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power - Max [Max]	Package / Case	Supplier Device Package	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDC3601N	2 N-Channel (Dual)	4 V	1 A	100 V	700 mW	SOT-23-6 Thin TSOT-23-6	SuperSOT™-6	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	5 nC	153 pF	500 mOhm

Catalog

Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ

Key Features

• 1.0 A, 100 V

• RDS(on)= 500 mΩ@ VGS= 10 V

• RDS(on)= 550 mΩ @ VGS= 6 V

• Low gate charge (3.7nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick)

Description

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.