Discrete Semiconductor Products

SQJ500AEP-T1_BE3

Active

MOSFET N/P-CH 40V 30A PPAK SO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N/P-CH 40V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ500AEP-T1_BE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	38.3 nC
Gate Charge (Qg) (Max) @ Vgs	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1843 pF, 1628 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power - Max	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9.2 mOhm, 27 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V, 2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Grade	Package / Case	Qualification	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Power - Max
Vishay General Semiconductor - Diodes Division SQJ500AEP-T1_GE3	30 A	27 mOhm	40 V	Surface Mount	-55 °C	175 ░C	38.1 nC	PowerPAK® SO-8 Dual	2.3 V	N and P-Channel	1850 pF	Automotive	PowerPAK® SO-8 Dual	AEC-Q101	48 W
Vishay General Semiconductor - Diodes Division SQJ500AEP-T1_BE3	30 A	9.2 mOhm 27 mOhm	40 V	Surface Mount	-55 °C	175 ░C	38.3 nC	PowerPAK® SO-8	2.3 V 2.5 V	N and P-Channel	1628 pF 1843 pF	Automotive	PowerPAK® SO-8	AEC-Q101		45 nC	MOSFET (Metal Oxide)	48 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources