Discrete Semiconductor Products

SQJ500AEP-T1_GE3

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MOSFET N/P-CH 40V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET N/P-CH 40V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ500AEP-T1_GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	38.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id	2.3 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Grade	Package / Case	Qualification	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Power - Max
Vishay General Semiconductor - Diodes Division SQJ500AEP-T1_GE3	30 A	27 mOhm	40 V	Surface Mount	-55 °C	175 ░C	38.1 nC	PowerPAK® SO-8 Dual	2.3 V	N and P-Channel	1850 pF	Automotive	PowerPAK® SO-8 Dual	AEC-Q101	48 W
Vishay General Semiconductor - Diodes Division SQJ500AEP-T1_BE3	30 A	9.2 mOhm 27 mOhm	40 V	Surface Mount	-55 °C	175 ░C	38.3 nC	PowerPAK® SO-8	2.3 V 2.5 V	N and P-Channel	1628 pF 1843 pF	Automotive	PowerPAK® SO-8	AEC-Q101		45 nC	MOSFET (Metal Oxide)	48 W

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General part information

Mosfet Array 40V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources