STU3N45K3
ActiveN-CHANNEL 450 V, 3.3 OHM TYP., 1.8 A MDMESH K3 POWER MOSFET IN AN IPAK PACKAGE
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STU3N45K3
ActiveN-CHANNEL 450 V, 3.3 OHM TYP., 1.8 A MDMESH K3 POWER MOSFET IN AN IPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STU3N45K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.8 A |
| Drain to Source Voltage (Vdss) | 450 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 150 pF |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 27 W |
| Rds On (Max) @ Id, Vgs | 3.8 Ohm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.38 | |
Description
General part information
STU3N45K3 Series
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Documents
Technical documentation and resources