STW18N60DM2
ActiveN-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
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STW18N60DM2
ActiveN-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW18N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 800 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 90 W |
| Rds On (Max) @ Id, Vgs | 295 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 602 | $ 3.61 | |
Description
General part information
STW18N60DM2 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources