Discrete Semiconductor Products
STGP6M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 6 A LOW LOSS
Discrete Semiconductor Products
STGP6M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 6 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP6M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Gate Charge | 21.2 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 88 W |
| Reverse Recovery Time (trr) | 140 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 40 µJ, 136 µJ |
| Td (on/off) @ 25°C [custom] | 86 ns |
| Td (on/off) @ 25°C [custom] | 12 ns |
| Test Condition | 400 V, 22 Ohm, 6 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.79 | |
Description
General part information
STGP6M65DF2 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.