Specification	FDB029N06

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	231 W
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FDB029N06 Series

N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ

Part	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Mounting Type
ON Semiconductor FDB029N06	231 W	TO-263 (D2PAK)	N-Channel	60 V	3.1 mOhm	151 nC	-55 °C	175 ░C	120 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4.5 V	MOSFET (Metal Oxide)	Surface Mount
ON Semiconductor FDB029N06	231 W	TO-263 (D2PAK)	N-Channel	60 V	3.1 mOhm	151 nC	-55 °C	175 ░C	120 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4.5 V	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	73	$ 4.14
		73	$ 4.14

Description

General part information

FDB029N06 Series

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.