FDB029N06 Series

N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ

Part	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Mounting Type
ON Semiconductor FDB029N06	231 W	TO-263 (D2PAK)	N-Channel	60 V	3.1 mOhm	151 nC	-55 °C	175 ░C	120 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4.5 V	MOSFET (Metal Oxide)	Surface Mount
ON Semiconductor FDB029N06	231 W	TO-263 (D2PAK)	N-Channel	60 V	3.1 mOhm	151 nC	-55 °C	175 ░C	120 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4.5 V	MOSFET (Metal Oxide)	Surface Mount

Catalog

N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ

Key Features

• RDS(on)= 2.4mΩ ( Typ.) @ VGS= 10V, ID= 75A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.