MJE18004D2G
ObsoleteHIGH SPEED, HIGH GAIN BIPOLAR NPN POWER TRANSISTOR WITH INTEGRATED COLLECTOR-EMITTER DIODE AND BUILT-IN EFFICIENT ANTISATURATION NETWORK
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MJE18004D2G
ObsoleteHIGH SPEED, HIGH GAIN BIPOLAR NPN POWER TRANSISTOR WITH INTEGRATED COLLECTOR-EMITTER DIODE AND BUILT-IN EFFICIENT ANTISATURATION NETWORK
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Technical Specifications
Parameters and characteristics for this part
| Specification | MJE18004D2G |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 6 |
| Frequency - Transition | 13 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 75 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 750 mV |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJE18004D2 Series
The MJE18004D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (+/- 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFEwindow.
Documents
Technical documentation and resources