MJE18004D2 Series

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

Manufacturer: ON Semiconductor

Catalog

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

Part	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max)	Power - Max [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJE18004D2G	750 mV	NPN	450 V	Through Hole	TO-220	5 A	75 W	13 MHz	100 µA	TO-220-3	6	150 °C	-65 °C

Catalog

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

Key Features

• Improved Efficiency Due to Low Base Drive Requirements:- High and Flat DC Current Gain h FE- Fast Switching- No Coil Required in Base Circuit for Turn-Off (No Current Tail)

• Full Characterization at 125°C

• Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions

• Two Package Choices: Standard TO-220 or isolated TO-220

• MJF18004, Case 221D, is UL Registered at 3500 VRMS: File #E69369

• Pb-Free Packages are Available

Description

The MJE18004D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (+/- 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFEwindow.