STGWT80H65DFB
ActiveTRENCH GATE FIELD-STOP 650 V, 80 A HIGH SPEED HB SERIES IGBT
STGWT80H65DFB
ActiveTRENCH GATE FIELD-STOP 650 V, 80 A HIGH SPEED HB SERIES IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWT80H65DFB |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 120 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Gate Charge | 414 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 469 W |
| Reverse Recovery Time (trr) | 85 ns |
| Supplier Device Package | TO-3P |
| Switching Energy | 1.5 mJ, 2.1 mJ |
| Td (on/off) @ 25°C [Max] | 280 ns |
| Td (on/off) @ 25°C [Min] | 84 ns |
| Test Condition | 400 V, 80 A, 15 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGWT80H65DFB Series
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.Maximum junction temperature: TJ= 175 °CHigh speed switching seriesMinimized tail currentVCE(sat)= 1.6 V (typ.) @ IC= 80 ATight parameter distributionSafe parallelingLow thermal resistanceVery fast soft recovery antiparallel diode
Documents
Technical documentation and resources