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ANALOG DEVICES MAX4624EZT+T
Discrete Semiconductor Products

NSS30201MR6T1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 30 V, 2 A, 1.75 W, TSOP, SURFACE MOUNT

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ANALOG DEVICES MAX4624EZT+T
Discrete Semiconductor Products

NSS30201MR6T1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 30 V, 2 A, 1.75 W, TSOP, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationNSS30201MR6T1G
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 hFE
Frequency - Transition300 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]535 mW
Supplier Device Package6-TSOP
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic75 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.94
10$ 0.59
100$ 0.38
500$ 0.29
1000$ 0.27
Digi-Reel® 1$ 0.94
10$ 0.59
100$ 0.38
500$ 0.29
1000$ 0.27
Tape & Reel (TR) 3000$ 0.17
NewarkEach (Supplied on Full Reel) 3000$ 0.25
6000$ 0.23
12000$ 0.21
18000$ 0.20
30000$ 0.19
ON SemiconductorN/A 1$ 0.20

Description

General part information

NSS30201MR6 Series

This 30 V, 2.0 A NPN Low VCE(sat)Bipolar Junction Transistor is a miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.